mrt100kp40a C mrt100kp400ca(e3) available unidirectional a nd bidirectional transient voltage suppressor (tvs) d evice screening in reference to mil - prf - 19500 available description th ese m rt100kp40a C m rt100kp400ca high reliability device s protect against dangerous high - voltage, short term transients such as those caused the the secondary effects of lightning per iec61000 -4- 5 (see protection classes below) and rtca/do - 160. they also protect against voltage spikes caused by inductive load switching, induced rfi, and esd or ef t per iec61000 -4- 2 and iec61000 -4- 4. clamping time is nearly instantaneous at < 5ns. do - 204ar package important: for the latest information, visit our website http://www.microsemi.com . features ? available in both unidirectional and bidirectional configurations ? suppresses transients up to 100 kw @ 6.4/69 s ? fast response with less than 5 ns turn - on time ? preferred 100 k w tvs fo r aircraft power bus protection ? 3 lot norm screening performed on standby current i d ? 100% surge tested devices ? multiple s creening levels in reference to mil - prf - 19500 are available . refer to hirel non - hermetic product portfolio for more details on the screening options . (see part nomenclature for all options.) ? high reliability controlled devices have wafer fabricatio n and assembly lot traceability ? moisture classification is l evel 1 with no dry pack required per ipc/jedec j - std - 020b ? rohs compliant version s are available applications / benefits ? economical tvs series for thru - hole mounting ? protection from high power switching transients, induced rf, and lightning threats w ith comparatively small package size (0.25 inch diameter) ? protection from esd and eft per iec61000 -4- 2 and iec61000 -4-4 ? pin injection protection per rtca/do - 160 up to level 4 f or waveform 4 (6.4/69 s) on all devices ? pin injection protection per rtca/do - 160 up to level 5 for waveform 4 (6.4/69 s) on device types mrt100kp33a or ca up to mrt100kp260a or ca ? pin injection protection per rtca/do - 160 up to level 3 for waveform 5a (40 /120 s) on all devices ? pin injection protection per rtca/do - 160 up to level 4 for waveform 5a (40/120 s) on device types mrt100kp33a or ca up to mrt100kp64a or ca ? consult factory for other voltages with similar peak pulse power (p pp ) capabilities msc C l awrence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, enni s, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com rf0101 2, rev . c ( 15 / 06 /1 5) ?201 5 microsemi corporation page 1 of 7 downloaded from: http:///
mrt100kp40a C mrt100kp400ca(e3) maximum ratings @ 25 oc unless otherwise noted p arameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +150 o c thermal resistance, junction to lead @ 3/8 inch (10 mm) lead length from body r ? jl 17.5 o c/w thermal resistance, junction to ambient (1) r ? ja 77.5 o c/w peak pulse power dissipation (2) 6.4 / 69 s p pp 1 00 kw steady - state power dissipation @ t a = 25 oc p d 7 1.61 (1) w t clamping (0 volts to v ( br) min , theoretical ) unidirectional bidirectional < 100 < 5 ps ns surge peak forward current (2) i fsm 250 a solder temperature @ 10 s 260 o c notes : 1. w hen mounted on fr4 pc board with 4 mm 2 copper pads (1 oz) and track width 1 mm, length 25 mm . 2. at 8.3 ms half - sine wave (unidirectional only). mechanical and packaging ? case: void- free transfer molded thermosetting epoxy body meeting ul94v - 0. ? terminals: tin - lead or rohs c ompliant annealed m atte -t in plating . s olderable per mil - std - 750, method 2026 . ? marking: p art number ? polarity: cathode indicated by band. no cathode band on bidirectional de vices . ? tape & reel option: standard per eia - 296 (add tr suffix to part number). consult factory for quantities. ? weight: approximately 1. 7 grams ? see p ackage d imensions on last page. part nomenclature m rt 10 0 k p 40 c a (e3) reliability level m ma mx mxl (*see hirel non - hermetic product portfolio ) rtca/do - 160 rated peak pulse power kilowatt rating encapsulated plastic package rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant voltage tolerance a = 5% tolerance level blank = 10% tolerance polarity c = bi - directional blank = unidirectional st and - off voltage rating (see electrical characteristics table) rf0101 2, rev . c ( 15 / 06 /1 5) ?201 5 microsemi corporation page 2 of 7 downloaded from: http:///
mrt100kp40a C mrt100kp400ca(e3) symbols & definitions symbol definition v( br) temperature coefficient of breakdown voltage: the change in breakdown voltage divided by the cha nge in temperature that caused it expressed in %/ c or mv/ c. v wm wo rking s tandoff v oltage: the maximum - rated value of dc or repetitive peak positive cathode - to - anode voltage that may be continuously applied over the standard operating temperature. p pp peak pulse power. the rated random recurring peak impulse power or rated nonrepetitive peak impulse pow er. the impulse power is the maximum - rated value of the product of i pp and v c . v ( br) breakdown voltage: the voltage across the device at a specified current i (br) in the breakdown region. i d standby current: the current through the device at rated stand - off voltage. i pp peak impulse current: the maximum rated random recurring peak impulse current or nonrepetiti ve peak impulse current that may be applied to a device. a random recurring or nonrepetitive transient current is usual ly due to an external cause, and it is assumed that its effect will have completely disappeared b efore the next transient arrives. v c clamping voltage: the voltage across the device in a region of low differential resistance duri ng the application of an impulse current (i pp ) for a specified waveform. i (br) breakdown current : the current used for measuring breakdown voltage v (br) rf0101 2, rev . c ( 15 / 06 /1 5) ?201 5 microsemi corporation page 3 of 7 downloaded from: http:///
mrt100kp40a C mrt100kp400ca(e3) electrical characteristics @ 25 oc pa rt num ber rate d s ta nd-of f vol ta ge v wm br eak down vol ta ge v (br) volts @ i (br) v (br) i (br) maxim um clampi ng @ i pp (1) v c maxim um reve rse le aka ge @ v wm i d maxim um p eak pulse c urr e nt (2) @ 6.4/69 s i pp maxim um v (br) tem pe rat ure c oe fficie nt v( br ) v olts v olts ma v olts am ps am ps mv/c mrt 100kp4 0a mrt 100 k p43a 40 43 44 .4-49.1 47 .8-52.8 20 10 78 .6 84 .5 1500 500 1273 * 1184 * 46 50 mrt 100 k p45a mrt 100 k p48a 45 48 50 .0-55.3 53 .3-58.9 5 5 88 .5 94 .3 150 150 1130 * 1061 * 52 56 mrt 100kp5 1a mrt 100kp5 4a 51 54 56 .7-62.7 60 .0-66.3 5 5 101 106 50 25 990 * 943 * 60 63 mrt 100kp5 8a mrt 100kp6 0a 58 60 64 .4-71.2 66 .7-73.7 5 5 114 118 15 15 878 848 68 71 mrt 100kp6 4a mrt 100 k p70a 64 70 71 .1-78.6 77 .8-86.0 5 5 126 138 10 10 795 725 76 83 mrt 100 k p75a mr t 100 k p78a 75 78 83 .3-92.1 86 .7-95.8 5 5 147 153 10 10 680 655 89 93 mrt 100kp8 5a mrt 100kp9 0a 85 90 94 .4- 104 100 -111 5 5 166 178 10 10 602 563 102 109 mrt 100kp1 0 0a mrt 100kp1 1 0a 100 110 111 -123 122 -135 5 5 197 216 10 10 508 463 121 133 mrt 100kp1 2 0a mrt 100k p1 3 0a 120 130 133 -147 144 -159 5 5 235 254 10 10 426 394 145 157 mrt 100kp1 5 0a mrt 100kp1 6 0a 150 160 167 -185 178 -197 5 5 296 315 10 10 338 318 183 195 mrt 100 k p170a mrt 100 k p180a 170 180 189 -209 200 -221 5 5 334 354 10 10 300 283 207 219 mrt 100 k p200a mrt 100 kp 220a 200 220 222 -245 245 -271 5 5 392 434 10 10 256 231 243 269 mrt 100kp2 5 0a mrt 100kp2 6 0a 250 260 278 -308 289 -320 5 5 493 512 10 10 203 196 306 318 mrt 100 k p280a mrt 100 k p300a 280 300 311 -345 333 -369 5 5 552 590 10 10 181 170 344 368 mrt 100 k p350a mrt 100 k p4 00a 350 400 389 -431 444 -492 5 5 690 787 10 10 145 127 430 490 note s: 1. clamping voltage does not include any variable parasitic lead inductance effects observed dur ing the 6.4 s rise time due to lead length. 2. the m aximum p eak p ulse c urrent (i pp ) shown represents the performance capabilities by design. *surge test screening is only performed up to 900 amps (test equipment limitations). rf0101 2, rev . c ( 15 / 06 /1 5) ?201 5 microsemi corporation page 4 of 7 downloaded from: http:///
mrt100kp40a C mrt100kp400ca(e3) graphs tp C pulse time C sec. t l lead temperature c figure 1 figure 2 peak pulse power vs. pulse time p ower derating to 50% of exponentially decaying pulse note: this p pp versus time graph allows the designer to use these parts over a broad power spectrum using the guidelines illustrated in micronote 104 on www.microsemi.com . aircraft transients are described with exponential decaying waveforms. for suppression of square - wave impulses, derate power and current to 66% of that for the exponential decay shown in figure 1. correct installation incorrect figure 3 figure 5 figure 4 figure 6 peak pulse power (p pp ) or c ontinuous power in % of 25c rating p pp peak pulse power vs. pulse time C kw non - repetitive pulse tvs devices used across power lines are subject to relatively high magnitude surge currents and are more prone to adverse parasitic inductance effects in the mounting leads. minimizing the shunt path of the lead inductance and their v = - ldi/dt effects will optimize the tvs effectiveness. examples of optimum installation and poor installation are il lustrated in figures 3 to 6. figure 3 illustrates minimal parasitic inductance with attachment at end of device. inductive voltage drop is across the input leads. virtually no overshoot voltage results as illustrated with figure 4. the loss of effectiven ess in protection caused by excessive parasitic inductance is illustrated in figures 5 and 6. also see micronote 111 for further information on p arasitic lead inductance in tvs. rf0101 2, rev . c ( 15 / 06 /1 5) ?201 5 microsemi corporation page 5 of 7 downloaded from: http:///
mrt100kp40a C mrt100kp400ca(e3) graphs (continued ) figure 7 C waveform 3 figures 8 C waveform 4 figure 9 C waveform 5a note: the 1 mhz damped oscillatory waveform (3) has an effective pulse width of 4 s. equivalent peak pulse power at each of the pulse widths represented in rtca/do - 160 for waveforms 3, 4 and 5a (above) have been determined referencing figure 1 herein as well as micronotes 104 and 120 (found on www.microsemi.com ) and are listed below. wavefo rm nu mber pu ls e w id th s peak pulse p ow er kw peak pul se curr ent con ver sion fact or * fr om ra t ed i pp at 6.4 / 69 s 3 4 340 3.40x 4 6. 4/69 100 1.00x 5a 40/1 20 70 0.70x * multiply by the conversion factor shown with reference to the maximum rated i pp in the electrical characteristics table on page 2 . note 1: high current fast rise - time transients of 250 ns or less can more than triple the v c from parasitic inductance effects (v= - ldi/dt) compared to the clamping voltage shown i n the initial electrical characteristics table as also described in figures 5 and 6 herein . note 2: also see micronotes 127 , 130 , and 132 on www.microsemi.com for further information on t ransient v oltage s uppressors with reference to aircraft industry specification rtca/do - 160 . rf0101 2, rev . c ( 15 / 06 /1 5) ?201 5 microsemi corporation page 6 of 7 downloaded from: http:///
mrt100kp40a C mrt100kp400ca(e3) package dimensions dimensions dim inch millimeters min max min max ll 1.100 1.500 27.95 38.1 bl 0.3 65 0.375 9.27 9.52 bd 0.240 0.250 6.1 6.35 ld 0.0 48 0.052 1.22 1.32 rf0101 2, rev . c ( 15 / 06 /1 5) ?201 5 microsemi corporation page 7 of 7 downloaded from: http:///
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